Method of manufacturing silicon wafer and silicon wafer

Abstract

A method of manufacturing silicon wafers that suppresses BMD precipitation while avoiding risks from metal contamination is provided. This method of manufacturing silicon wafers involves a first RTO where a planarized silicon wafer W, fabricated from a single-crystal ingot grown by the CZ method, is heated to a first maximum temperature reached of 1300° C. to 1380° C. in an oxidizing atmosphere having an oxygen partial pressure of 25% to 100%, held at the first maximum temperature reached for 5 s or longer, an oxide film removal step where the silicon wafer W obtained from the first RTO is cleaned with hydrofluoric acid, and a second RTO where the silicon wafer W obtained from the oxide film removal step is heated to a second maximum temperature reached of 1050° C. to less than 1300° C. in an oxidizing atmosphere, and held at the second maximum reach temperature for 5 s or longer.

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