H10P 14/6318
Formation by simultaneous oxidation and nitridation
Official title: {Formation by simultaneous oxidation and nitridation}
H10P14/6318 (Formation by simultaneous oxidation and nitridation) appears on 117 US grants and 105 published applications in this corpus.
Search patents in H10P- Granted patents
- 117
- Published applications
- 105
- Assignees
- 58
- Inventors
- 312
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 4 | 0 |
| 2000 | 5 | 0 |
| 2001 | 7 | 4 |
| 2002 | 10 | 5 |
| 2003 | 3 | 6 |
| 2004 | 5 | 8 |
| 2005 | 5 | 10 |
| 2006 | 4 | 6 |
| 2007 | 3 | 5 |
| 2008 | 2 | 4 |
| 2009 | 9 | 1 |
| 2010 | 4 | 6 |
| 2011 | 2 | 1 |
| 2012 | 1 | 2 |
| 2013 | 2 | 2 |
| 2014 | 2 | 10 |
| 2015 | 7 | 3 |
| 2016 | 7 | 5 |
| 2017 | 3 | 2 |
| 2018 | 5 | 3 |
| 2019 | 3 | 4 |
| 2020 | 2 | 3 |
| 2021 | 4 | 8 |
| 2022 | 4 | 2 |
| 2023 | 3 | 1 |
| 2024 | 3 | 4 |
| 2025 | 2 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Sin gap fill via nucleation inhibition8 Sep 2026US 12,733,416 B2APPLIED Materials.Inc.
- Capacitor structure and method of making the same17 Jun 2025US 12,336,201 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Apparatus for processing substrate10 Jun 2025US 12,325,919 B2Tokyo Electron Limited
- In-situ steam generated oxynitride15 Oct 2024US 12,116,676 B2X-FAB France SAS
- Multi-channel devices and methods of manufacture10 Sep 2024US 12,087,638 B2Taiwan Semiconductor Manufacturing Company.Ltd
- In-situ steam generated oxynitride19 Dec 2024US 2024/0417842 A1X-FAB France SAS
- Multi-channel devices and methods of manufacture31 Oct 2024US 2024/0363425 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, method of manufacturing semiconductor device, and semiconductor package including semiconductor device26 Sep 2024US 2024/0321774 A1Samsung Electronics Co., Ltd.
- Sin gap fill via nucleation inhibition2 May 2024US 2024/0145235 A1APPLIED Materials.Inc.
- Multi-Channel Devices and Methods of Manufacture12 Oct 2023US 2023/0326990 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Atomic layer deposition and conversion537US 7,589,029 B2Micron Technology, Inc. · 2009
- Semiconductor device dielectric interface layer508US 9,177,784 B2ASM IP Holdings B.V. · 2015