Apparatus for processing substrate

An apparatus for processing a substrate, the apparatus comprising:

• at least a first and a second chamber;
• and
• a controller comprising a memory and a processor coupled to the memory, wherein
• the memory stores computer-executable instructions for controlling the processor to perform a process comprising:
• first forming a first film in a first region of the substrate in the first chamber by chemical vapor deposition;
• second forming, by introducing a precursor of material adsorbed with the substrate into the chamber, introducing modifying gas into the chamber, and generating plasma from the modifying gas, a second film in a second region of the substrate in the first chamber;
• and
• etching the substrate in the second chamber, wherein
• the first forming and the second forming are performed without moving the substrate out of the first chamber,
• the first and second chambers are different chambers, and
• the etching performs an atomic layer etching and includes:
• modifying a surface of the substrate by one of N plasma and H plasma, purging the chamber, and
• removing the surface modified by the one of N plasma and the H plasma by halogen gas.