Semiconductor device, method of manufacturing semiconductor device, and semiconductor package including semiconductor device

A semiconductor package comprising a plurality of semiconductor devices stacked in a vertical direction, wherein each semiconductor device of the plurality of semiconductor devices comprises:

• a crystalline silicon layer;
• an amorphous silicon layer on the crystalline silicon layer and extending along a first surface of the crystalline silicon layer;
• and
• a dielectric layer on the amorphous silicon layer and extending along a surface of the amorphous silicon layer, wherein the dielectric layer includes silicon oxynitride and has compressive stress.

A semiconductor package comprising:

• a first redistribution structure including a first redistribution pattern;
• a semiconductor device on the first redistribution structure;
• a molding layer disposed on the first redistribution structure and configured to cover the semiconductor device;
• a second redistribution structure disposed on the molding layer and including a second redistribution pattern;
• and
• a vertical connection conductor electrically connecting the first redistribution pattern to the second redistribution pattern,
• wherein the semiconductor device comprises:
• a crystalline silicon layer having a first surface and a second surface opposite to the first surface, the second surface facing the first redistribution structure;
• an amorphous silicon layer on the crystalline silicon layer, extending along the first surface of the crystalline silicon layer, and contacting the first surface of the crystalline silicon layer;
• a dielectric layer on the amorphous silicon layer and extending along a surface of the amorphous silicon layer, wherein the dielectric layer includes silicon oxynitride and has compressive stress;
• and
• an interconnect structure between the second surface of the crystalline silicon layer and the first redistribution structure, wherein the interconnect structure includes a wiring pattern.