In-situ steam generated oxynitride
AssigneeX-FAB France SAS
InventorsSotirios Athanasiou, Laurence Vallier
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Abstract
A method of forming an oxide layer in an in-situ steam generation (ISSG) process, including providing a silicon substrate in a rapid thermal process (RTP) chamber and injecting a gas mixture into the RTP chamber. The method further includes heating a surface of the silicon substrate to a reaction temperature, so that the gas mixture reacts close to the surface to form steam and thereby oxidize the silicon substrate to form the oxide layer on the surface, and wherein the gas mixture comprises hydrogen (H2), oxygen (O2) and nitrous oxide (N2O).
Claims17
A method of forming an oxide layer in an in-situ steam generation (ISSG) process, comprising:
- providing a silicon substrate in a rapid thermal process (RTP) chamber;
- injecting a gas mixture comprising hydrogen (H2), oxygen (O2) and nitrous oxide (N2O) into said RTP chamber;
- heating a surface of the silicon substrate to a reaction temperature, so that the gas mixture reacts close to said surface to form steam and thereby oxidize said silicon substrate to form an oxide layer on said surface;
- and
- decreasing a flow rate of said nitrous oxide in multiple discrete steps over time while said surface of the silicon substrate is at or above said reaction temperature, wherein the flow rate of N2O is decreased in discrete steps of between 0.5 to 2 SLM.
Dependencies are inferred from the claim text.