Doping free connection structures and methods
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Min Huang, Tzu-Jui Wang, Jung-I Lin, Hung-Chang Chien, Kuan-Chieh Huang, Tzu-Hsuan Hsu, Chen-Jong Wang
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Abstract
Structures with doping free connections and methods of fabrication are provided. An exemplary structure includes a substrate; a first region of a first conductivity type formed in the substrate; an overlying layer located over the substrate; a well region of a second conductivity type formed in the overlying layer; a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region; and a passivation layer located between the conductive plug and the well region.
Claims20
A structure comprising:
- a first region of a first conductivity type;
- an overlying layer located over the first region;
- a well region of a second conductivity type formed in the overlying layer;
- a conductive plug laterally adjacent to the well region and extending through the overlying layer to electrically contact with the first region;
- and
- a passivation layer located between the conductive plug and the well region, wherein the passivation layer is an oxide.
A cell comprising:
- an anode and a cathode;
- a first-type doped well connected to the anode;
- a second-type doped buried layer;
- a conductive plug directly connected to the buried layer and to the cathode;
- and
- a passivation layer located between the conductive plug and the well.
A structure comprising:
- a first region of a first conductivity type;
- an overlying layer located over the first region;
- a well region of a second conductivity type formed in the overlying layer;
- a deep trench isolation;
- and
- a conductive plug located between the deep trench isolation and the well region and extending through the overlying layer to electrically contact with the first region.
Dependencies are inferred from the claim text.