Method of fabricating a semiconductor structure including a metal oxide interface
AssigneeMotorola, Inc.
InventorsJamal Ramdani, Ravindranath Droopad, Zhiyi Yu
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Abstract
A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the surface (12) of the silicon substrate (10); providing a metal oxide (18) on the amorphous silicon dioxide (14); heating the semiconductor structure to form an interface comprising a seed layer (20) adjacent the surface (12) of the silicon substrate (10); and forming one or more layers of a high dielectric constant oxide (22) on the seed layer (20).
Claims23
A method of fabricating a semiconductor structure comprising the steps of:
- providing a silicon substrate having a surface;
- forming on the surface of the silicon substrate a seed layer comprising a single crystal silicate material, comprising the steps of:
- forming on the silicon substrate a silicon oxide layer having a surface;
- depositing a metal oxide on the surface of the silicon oxide layer;
- and
- heating the silicon oxide layer and the metal oxide thereby converting substantially all of the silicon oxide layer and metal oxide into the single crystal silicate material;
- and
- forming one or more layers of a single crystal high dielectric constant oxide on the seed layer.
A method of fabricating a semiconductor structure comprising the steps of:
- providing a silicon substrate having a surface;
- forming amorphous silicon dioxide on the surface of the silicon substrate;
- providing a metal oxide on the amorphous silicon dioxide;
- and
- heating the semiconductor structure to convert substantially all of the amorphous silicon dioxide and metal oxide to form an interface comprising a crystalline seed layer adjacent the surface of the silicon substrate.
A method of fabricating a semiconductor structure comprising the steps of:
- providing a silicon substrate having a surface;
- forming amorphous silicon dioxide on the surface of the silicon substrate;
- providing a metal oxide on the amorphous silicon dioxide;
- heating the semiconductor structure to convert substantially all of the amorphous silicon dioxide and metal oxide to form an interface comprising a crystalline seed layer adjacent the surface of the silicon substrate;
- and
- forming one or more layers of a single crystal high dielectric constant oxide on the seed layer.
Dependencies are inferred from the claim text.