FinFET and method of fabricating the same

A method of making a semiconductor structure, comprising:

• forming a plurality of fin structures on a substrate;
• forming a plurality of insulation structures, each pair of adjacent two of the insulation structures sandwiching a corresponding one of the fin structures, top surfaces of the insulation structures being lower than top surfaces of the fin structures;
• partially recessing the fin structures to form a plurality of recessed portions of the fin structures, top surfaces of the recessed portions being lower than the top surfaces of the insulation structures, and the insulation structures and recessed portions of the fin structures defining a plurality of trenches;
• partially removing corners of the top surfaces of the insulation structures to enlarge widths of top portions of the trenches;
• and
• growing a strain-inducing structure filling the trenches, the strain-inducing structure having a top surface higher than the top surfaces of the insulation structures, and the strain-inducing structure being arranged to strain the plurality of fin structures.

A method of making a semiconductor structure, comprising:

• forming a plurality of insulation structures over a substrate;
• forming a plurality of trenches, each of the plurality of trenches being between two corresponding insulation structures of the plurality of insulation structures, and the trenches exposing portions of the substrate;
• shaping top portions of the insulation structures to have tapered top surfaces after the formation of the plurality of trenches;
• and
• growing a silicon-containing structure on the exposed portions of substrate, the silicon-containing structure filling the trenches and covering the corresponding tapered top surfaces between the trenches.