Method of forming semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-I Lin, Chun-Heng Chen, Ming-Ho Lin, Chi-On Chui
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device includes the following steps. A protrusion is formed. A first dielectric layer is conformally formed on the protrusion. A second dielectric layer is formed to cover the first dielectric layer over the protrusion, wherein a thickness of the second dielectric layer on a sidewall of the protrusion is less than a thickness of the first dielectric layer on the sidewall of the protrusion, and a thickness of the second dielectric layer on a top of the protrusion is greater than a thickness of the first dielectric layer on the top of the protrusion.
Claims20
A method of forming a semiconductor device, comprising:
- forming a protrusion;
- conformally forming a first dielectric layer on the protrusion;
- and
- forming a second dielectric layer to cover the first dielectric layer over the protrusion, wherein a thickness of the second dielectric layer on a sidewall of the protrusion is less than a thickness of the first dielectric layer on the sidewall of the protrusion, and a thickness of the second dielectric layer on a top of the protrusion is greater than a thickness of the first dielectric layer on the top of the protrusion.
A method of forming a semiconductor device, comprising:
- forming a fin protruding from a substrate;
- and
- non-conformally forming a dielectric pattern over the fin, wherein a thickness of the dielectric pattern on a sidewall of the fin decreases as the dielectric pattern becomes closer to the substrate.
A method of forming a semiconductor device, comprising:
- forming a plurality of fins protruding from a substrate;
- forming a first dielectric layer continuously over the fins and the substrate;
- and
- forming a plurality of cap structures to cover tops of the fins respectively, wherein curvatures of tops of the cap structures are respectively larger than curvatures of the tops of the fins covered by the cap structures.
Dependencies are inferred from the claim text.