Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

A method of selectively forming a film, comprising:

• (a) supplying an adsorption suppressor to a substrate, whose surface has a first base and a second base, under a first temperature of 80 degrees Celsius or higher to adsorb the adsorption suppressor on a surface of one of the first base and the second base;
• (b) annealing the substrate under a second temperature higher than the first temperature after adsorbing the adsorption suppressor on the surface of the one base;
• and
• (c) forming a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base, by supplying a film-forming gas to the annealed substrate under a third temperature lower than the second temperature,
• wherein the surface of the substrate further has a third base,
• wherein in (a), the adsorption suppressor is adsorbed on a surface of the third base, and
• wherein the first base includes a conductive metal element-containing film, the second base includes a nitride film, and the third base includes an oxide film.