Back to results
US 2022/0375753 A1Published application
Doping Techniques
AssigneeApplied Materials, Inc.
InventorsWolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
Life of this patent
Estimating the term…
Abstract
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
Claims14
A method of forming an electronic device, the method comprising:
- forming an amorphous dopant layer on a crystalline semiconductor material;
- depositing additional semiconductor material on the amorphous dopant layer, the additional semiconductor material being substantially amorphous;
- and
- annealing the electronic device to crystallize the additional semiconductor material to form a doped crystalline semiconductor material.
1 more element
Dependencies are inferred from the claim text.