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US 12,261,047 B2Granted
Doping techniques
AssigneeApplied Materials, Inc.
InventorsWolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
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Abstract
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
Claims16
A method of forming an electronic device, the method comprising:
- forming an amorphous boron dopant layer on a crystalline semiconductor material;
- depositing additional semiconductor material on the amorphous boron dopant layer, the additional semiconductor material being substantially amorphous;
- and
- annealing the electronic device at a temperature in the range of about 1000° C. to about 1300° C. to crystallize the additional semiconductor material and to melt the amorphous boron dopant layer to drive the boron from dopant layer into the additional semiconductor material to a depth greater than or equal to about 1 nm form a boron-doped crystalline semiconductor material.
1 more element
Dependencies are inferred from the claim text.