H10P 14/6339
Deposition by cyclic cvd
Official title: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
H10P14/6339 (Deposition by cyclic cvd) appears on 4,961 US grants and 6,437 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,961
- Published applications
- 6,437
- Assignees
- 623
- Inventors
- 7,353
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 7 | 0 |
| 2001 | 27 | 24 |
| 2002 | 45 | 81 |
| 2003 | 88 | 126 |
| 2004 | 95 | 175 |
| 2005 | 83 | 177 |
| 2006 | 116 | 228 |
| 2007 | 100 | 172 |
| 2008 | 109 | 164 |
| 2009 | 133 | 151 |
| 2010 | 133 | 138 |
| 2011 | 140 | 133 |
| 2012 | 116 | 146 |
| 2013 | 135 | 171 |
| 2014 | 135 | 195 |
| 2015 | 186 | 284 |
| 2016 | 261 | 278 |
| 2017 | 257 | 334 |
| 2018 | 289 | 343 |
| 2019 | 318 | 410 |
| 2020 | 414 | 528 |
| 2021 | 345 | 410 |
| 2022 | 316 | 427 |
| 2023 | 277 | 407 |
| 2024 | 312 | 366 |
| 2025 | 322 | 371 |
| 2026 | 179 | 198 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Semiconductor memory device manufacturing method6 Oct 2026US 12,757,699 B2Nanya Technology Corporation
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming semiconductor device8 Oct 2026US 2026/0314058 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective Deposition of Barrier Layer8 Oct 2026US 2026/0314362 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Processing method, method of manufacturing semiconductor device, recording medium, and processing apparatus1 Oct 2026US 2026/0297742 A1Kokusai Electric Corporation
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Apparatus for performing growth of compound thin films918US 4,389,973 AOy Lohja AB · 1983
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002