Semiconductor memory device manufacturing method
AssigneeNanya Technology Corporation
InventorChin-Chung Ke
Life of this patent
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Abstract
A semiconductor memory device manufacturing method includes the following steps. A word line trench is formed in an active area of a substrate. An oxide liner is formed in the word line trench such that the word line trench has a first width at a first opening of the word line trench after forming the oxide liner. A word line metal is formed in the word line trench. A nitride layer is formed over the active area of the substrate. The nitride layer is patterned to form a second opening that is communicable with the first opening of the word line trench, wherein the second opening has a second width greater than the first width.
Claims20
A semiconductor memory device manufacturing method comprising:
- forming a word line trench in an active area of a substrate;
- forming an oxide liner in the word line trench such that the word line trench has a first width at a first opening of the word line trench after forming the oxide liner;
- forming a word line metal in the word line trench;
- forming a nitride layer over the active area of the substrate;
- and
- patterning the nitride layer to form a second opening that is communicable with the first opening of the word line trench, wherein the patterned nitride layer is above the word line trench and spaced from the oxide liner, the second opening has a second width that is defined between sidewalls of the patterned nitride layer, and the second width is greater than the first width.
A semiconductor memory device manufacturing method comprising:
- forming a word line trench in an active area of a substrate;
- forming an oxide liner in the word line trench such that the word line trench has a first width at a first opening of the word line trench after forming the oxide liner;
- forming a word line metal in the word line trench;
- forming a diffusion barrier to wrap the word line metal;
- forming a conductive layer in the word line trench and above the word line metal;
- forming a nitride layer over the active area of the substrate;
- and
- patterning the nitride layer to form a second opening that is communicable with the first opening of the word line trench, wherein the patterned nitride layer is above the word line trench and spaced from the oxide liner, the second opening has a second width that is defined between sidewalls of the patterned nitride layer, and the second width is greater than the first width.
Dependencies are inferred from the claim text.