H10P 14/6309
Of silicon in uncombined form, i.e. pure silicon
Official title: {of silicon in uncombined form, i.e. pure silicon}
H10P14/6309 (Of silicon in uncombined form, i.e. pure silicon) appears on 1,663 US grants and 1,459 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,663
- Published applications
- 1,459
- Assignees
- 425
- Inventors
- 3,332
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 20 | 0 |
| 1978 | 11 | 0 |
| 1979 | 14 | 0 |
| 1980 | 7 | 0 |
| 1981 | 9 | 0 |
| 1982 | 6 | 0 |
| 1983 | 6 | 0 |
| 1984 | 6 | 0 |
| 1985 | 13 | 0 |
| 1986 | 17 | 0 |
| 1987 | 12 | 0 |
| 1988 | 10 | 0 |
| 1989 | 6 | 0 |
| 1990 | 10 | 0 |
| 1991 | 12 | 0 |
| 1992 | 15 | 0 |
| 1993 | 14 | 0 |
| 1994 | 25 | 0 |
| 1995 | 16 | 0 |
| 1996 | 6 | 0 |
| 1997 | 16 | 0 |
| 1998 | 24 | 0 |
| 1999 | 41 | 0 |
| 2000 | 28 | 0 |
| 2001 | 69 | 35 |
| 2002 | 84 | 77 |
| 2003 | 76 | 65 |
| 2004 | 62 | 94 |
| 2005 | 42 | 81 |
| 2006 | 53 | 60 |
| 2007 | 51 | 67 |
| 2008 | 33 | 57 |
| 2009 | 28 | 57 |
| 2010 | 42 | 45 |
| 2011 | 52 | 28 |
| 2012 | 31 | 33 |
| 2013 | 24 | 25 |
| 2014 | 31 | 39 |
| 2015 | 55 | 81 |
| 2016 | 81 | 82 |
| 2017 | 75 | 77 |
| 2018 | 52 | 54 |
| 2019 | 68 | 57 |
| 2020 | 59 | 71 |
| 2021 | 50 | 57 |
| 2022 | 48 | 53 |
| 2023 | 37 | 63 |
| 2024 | 40 | 45 |
| 2025 | 45 | 34 |
| 2026 | 20 | 22 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,351 B2Kokusai Electric Corporation
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Semiconductor device having nanostructure transistor and methods of fabrication thereof18 Aug 2026US 12,713,637 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and method for deep trench capacitor with reduced deformation11 Aug 2026US 12,707,655 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device16 Jun 2026US 12,660,523 B2Kioxia Corporation
- Multi-gate devices with reduced parasitic capacitance and methods of forming the same1 Oct 2026US 2026/0304930 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Method of manufacturing silicon wafer and silicon wafer17 Sep 2026US 2026/0282774 A1Globalwafers Japan Co., Ltd.
- Method for determining cleaning conditions for semiconductor wafer, and method for cleaning the same3 Sep 2026US 2026/0262463 A1Sumco Corporation
- Equal matching of oxidation rate between sige and si through clustered pre-clean and pre-surface nitridation13 Aug 2026US 2026/0239898 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Process for forming thin dielectric layers in semiconductor devices518US 6,281,141 B1Steag RTP Systems, Inc. · 2001
- Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device512US 6,287,988 B1Kabushiki Kaisha Toshiba · 2001
- Semiconductor device dielectric interface layer508US 9,177,784 B2ASM IP Holdings B.V. · 2015