H10P 14/3404
Being group iva materials
Official title: {being Group IVA materials}
H10P14/3404 (Being group iva materials) appears on 11,349 US grants and 11,569 published applications in this corpus.
Search patents in H10P- Granted patents
- 11,349
- Published applications
- 11,569
- Assignees
- 1,655
- Inventors
- 13,829
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 12 | 0 |
| 1978 | 17 | 0 |
| 1979 | 22 | 0 |
| 1980 | 14 | 0 |
| 1981 | 13 | 0 |
| 1982 | 21 | 0 |
| 1983 | 21 | 0 |
| 1984 | 36 | 0 |
| 1985 | 54 | 0 |
| 1986 | 56 | 0 |
| 1987 | 61 | 0 |
| 1988 | 54 | 0 |
| 1989 | 68 | 0 |
| 1990 | 38 | 0 |
| 1991 | 52 | 0 |
| 1992 | 54 | 0 |
| 1993 | 82 | 0 |
| 1994 | 81 | 0 |
| 1995 | 75 | 0 |
| 1996 | 84 | 0 |
| 1997 | 76 | 0 |
| 1998 | 114 | 0 |
| 1999 | 158 | 0 |
| 2000 | 146 | 0 |
| 2001 | 174 | 79 |
| 2002 | 201 | 231 |
| 2003 | 190 | 272 |
| 2004 | 234 | 312 |
| 2005 | 201 | 408 |
| 2006 | 264 | 398 |
| 2007 | 255 | 374 |
| 2008 | 262 | 323 |
| 2009 | 271 | 306 |
| 2010 | 317 | 381 |
| 2011 | 313 | 363 |
| 2012 | 254 | 370 |
| 2013 | 323 | 399 |
| 2014 | 399 | 486 |
| 2015 | 488 | 693 |
| 2016 | 711 | 722 |
| 2017 | 716 | 789 |
| 2018 | 651 | 641 |
| 2019 | 684 | 738 |
| 2020 | 690 | 781 |
| 2021 | 583 | 569 |
| 2022 | 470 | 537 |
| 2023 | 394 | 467 |
| 2024 | 372 | 404 |
| 2025 | 345 | 357 |
| 2026 | 167 | 169 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Substrate processing method and substrate processing apparatus6 Oct 2026US 12,757,648 B2Tokyo Electron Limited
- Gate all around backside power rail with diffusion break29 Sep 2026US 12,751,271 B2APPLIED Materials.Inc.
- Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition15 Sep 2026US 12,735,806 B2Xiamen University
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314000 A1National Taiwan University
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014