H10P 14/3411
Silicon, silicon germanium or germanium
Official title: {Silicon, silicon germanium or germanium}
H10P14/3411 (Silicon, silicon germanium or germanium) appears on 9,768 US grants and 9,517 published applications in this corpus.
Search patents in H10P- Granted patents
- 9,768
- Published applications
- 9,517
- Assignees
- 1,291
- Inventors
- 11,149
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 12 | 0 |
| 1978 | 17 | 0 |
| 1979 | 21 | 0 |
| 1980 | 14 | 0 |
| 1981 | 13 | 0 |
| 1982 | 20 | 0 |
| 1983 | 21 | 0 |
| 1984 | 35 | 0 |
| 1985 | 54 | 0 |
| 1986 | 55 | 0 |
| 1987 | 60 | 0 |
| 1988 | 53 | 0 |
| 1989 | 66 | 0 |
| 1990 | 34 | 0 |
| 1991 | 44 | 0 |
| 1992 | 50 | 0 |
| 1993 | 74 | 0 |
| 1994 | 77 | 0 |
| 1995 | 72 | 0 |
| 1996 | 78 | 0 |
| 1997 | 71 | 0 |
| 1998 | 108 | 0 |
| 1999 | 155 | 0 |
| 2000 | 137 | 0 |
| 2001 | 168 | 77 |
| 2002 | 198 | 224 |
| 2003 | 184 | 266 |
| 2004 | 231 | 304 |
| 2005 | 195 | 392 |
| 2006 | 254 | 375 |
| 2007 | 244 | 349 |
| 2008 | 249 | 283 |
| 2009 | 255 | 273 |
| 2010 | 299 | 309 |
| 2011 | 277 | 287 |
| 2012 | 206 | 269 |
| 2013 | 251 | 292 |
| 2014 | 308 | 349 |
| 2015 | 373 | 540 |
| 2016 | 591 | 591 |
| 2017 | 598 | 636 |
| 2018 | 535 | 506 |
| 2019 | 543 | 573 |
| 2020 | 550 | 647 |
| 2021 | 495 | 482 |
| 2022 | 388 | 434 |
| 2023 | 340 | 365 |
| 2024 | 300 | 312 |
| 2025 | 270 | 263 |
| 2026 | 115 | 119 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Substrate processing method and substrate processing apparatus6 Oct 2026US 12,757,648 B2Tokyo Electron Limited
- Gate all around backside power rail with diffusion break29 Sep 2026US 12,751,271 B2APPLIED Materials.Inc.
- Methods for forming gate structures15 Sep 2026US 12,740,104 B2APPLIED Materials.Inc.
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structure for semiconductor device8 Oct 2026US 2026/0314023 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Finfet device having flat-top epitaxial features and method of making the same8 Oct 2026US 2026/0314059 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014