H10P 14/3402
Characterised by the chemical composition
Official title: {characterised by the chemical composition}
H10P14/3402 (Characterised by the chemical composition) appears on 20,397 US grants and 22,365 published applications in this corpus.
Search patents in H10P- Granted patents
- 20,397
- Published applications
- 22,365
- Assignees
- 2,993
- Inventors
- 25,234
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 47 | 0 |
| 1977 | 36 | 0 |
| 1978 | 40 | 0 |
| 1979 | 42 | 0 |
| 1980 | 44 | 0 |
| 1981 | 32 | 0 |
| 1982 | 30 | 0 |
| 1983 | 41 | 0 |
| 1984 | 56 | 0 |
| 1985 | 75 | 0 |
| 1986 | 78 | 0 |
| 1987 | 89 | 0 |
| 1988 | 75 | 0 |
| 1989 | 124 | 0 |
| 1990 | 80 | 0 |
| 1991 | 107 | 0 |
| 1992 | 105 | 0 |
| 1993 | 141 | 0 |
| 1994 | 135 | 0 |
| 1995 | 131 | 0 |
| 1996 | 120 | 0 |
| 1997 | 113 | 0 |
| 1998 | 168 | 0 |
| 1999 | 210 | 0 |
| 2000 | 195 | 0 |
| 2001 | 251 | 127 |
| 2002 | 296 | 430 |
| 2003 | 319 | 513 |
| 2004 | 348 | 471 |
| 2005 | 322 | 595 |
| 2006 | 383 | 629 |
| 2007 | 359 | 607 |
| 2008 | 383 | 611 |
| 2009 | 430 | 639 |
| 2010 | 537 | 879 |
| 2011 | 601 | 990 |
| 2012 | 628 | 994 |
| 2013 | 767 | 1040 |
| 2014 | 1037 | 1208 |
| 2015 | 1134 | 1459 |
| 2016 | 1376 | 1386 |
| 2017 | 1338 | 1432 |
| 2018 | 1186 | 1154 |
| 2019 | 1188 | 1222 |
| 2020 | 1103 | 1266 |
| 2021 | 932 | 1056 |
| 2022 | 775 | 959 |
| 2023 | 701 | 897 |
| 2024 | 706 | 797 |
| 2025 | 646 | 665 |
| 2026 | 337 | 339 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Non-volatile memory device having primary memory layer with oxygen gradient6 Oct 2026US 12,757,411 B2Nanyang Technological University
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby3,970US 7,402,506 B2Eastman Kodak Company · 2008
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008