H10P 14/3434
Being oxide semiconductor materials
Official title: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
H10P14/3434 (Being oxide semiconductor materials) appears on 1,965 US grants and 2,616 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,965
- Published applications
- 2,616
- Assignees
- 500
- Inventors
- 2,918
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 5 |
| 2003 | 2 | 0 |
| 2004 | 2 | 9 |
| 2005 | 2 | 10 |
| 2006 | 7 | 16 |
| 2007 | 5 | 15 |
| 2008 | 6 | 25 |
| 2009 | 11 | 33 |
| 2010 | 16 | 109 |
| 2011 | 32 | 121 |
| 2012 | 47 | 126 |
| 2013 | 80 | 131 |
| 2014 | 167 | 179 |
| 2015 | 176 | 272 |
| 2016 | 192 | 191 |
| 2017 | 201 | 193 |
| 2018 | 159 | 140 |
| 2019 | 136 | 131 |
| 2020 | 103 | 157 |
| 2021 | 107 | 158 |
| 2022 | 111 | 160 |
| 2023 | 100 | 137 |
| 2024 | 120 | 134 |
| 2025 | 107 | 107 |
| 2026 | 66 | 57 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Non-volatile memory device having primary memory layer with oxygen gradient6 Oct 2026US 12,757,411 B2Nanyang Technological University
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic circuit comprising transistor and resistor8 Oct 2026US 2026/0314039 A1Pragmatic Semiconductor Limited
- Method of manufacturing thin film by using atomic layer deposition method and method of manufacturing semiconductor device using the same1 Oct 2026US 2026/0297746 A1Samsung Electronics Co., Ltd.
- 3D Stackable Memory and Methods of Manufacture1 Oct 2026US 2026/0304789 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Method of fabricating oxide semiconductor device3,948US 7,468,304 B2Canon Kabushiki Kaisha · 2008