H10P 14/3424
Being group iib-via materials
Official title: {being Group IIB-VIA materials}
H10P14/3424 (Being group iib-via materials) appears on 1,823 US grants and 2,191 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,823
- Published applications
- 2,191
- Assignees
- 621
- Inventors
- 3,368
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 6 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 8 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 6 | 0 |
| 1984 | 8 | 0 |
| 1985 | 5 | 0 |
| 1986 | 8 | 0 |
| 1987 | 6 | 0 |
| 1988 | 6 | 0 |
| 1989 | 15 | 0 |
| 1990 | 10 | 0 |
| 1991 | 11 | 0 |
| 1992 | 9 | 0 |
| 1993 | 12 | 0 |
| 1994 | 12 | 0 |
| 1995 | 10 | 0 |
| 1996 | 10 | 0 |
| 1997 | 2 | 0 |
| 1998 | 10 | 0 |
| 1999 | 12 | 0 |
| 2000 | 11 | 0 |
| 2001 | 4 | 0 |
| 2002 | 8 | 18 |
| 2003 | 10 | 12 |
| 2004 | 5 | 27 |
| 2005 | 10 | 24 |
| 2006 | 21 | 44 |
| 2007 | 23 | 45 |
| 2008 | 17 | 62 |
| 2009 | 35 | 74 |
| 2010 | 38 | 142 |
| 2011 | 63 | 171 |
| 2012 | 79 | 140 |
| 2013 | 108 | 149 |
| 2014 | 163 | 184 |
| 2015 | 135 | 202 |
| 2016 | 163 | 176 |
| 2017 | 156 | 134 |
| 2018 | 125 | 90 |
| 2019 | 90 | 81 |
| 2020 | 71 | 89 |
| 2021 | 77 | 71 |
| 2022 | 57 | 68 |
| 2023 | 56 | 68 |
| 2024 | 62 | 63 |
| 2025 | 39 | 42 |
| 2026 | 17 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Antimony-gallium-zinc-oxide materials11 Aug 2026US 12,707,689 B2Micron Technology, Inc.
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same21 Jul 2026US 12,690,233 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device2 Jun 2026US 12,648,235 B2Idemitsu Kosan Co., Ltd.
- Method for modifying insulating film and method for manufacturing semiconductor device19 May 2026US 12,635,258 B2Semiconductor Energy Laboratory Co.Ltd.
- Metal oxide semiconductor-based light emitting device19 May 2026US 12,635,296 B2Silanna UV Technologies Pte Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for modifying insulating film and method for manufacturing semiconductor device20 Aug 2026US 2026/0247722 A1Semiconductor Energy Laboratory Co.Ltd.
- Manufacturing Method Of Semiconductor Device13 Aug 2026US 2026/0239937 A1Semiconductor Energy Laboratory Co.Ltd.
- Vertically integrated transistors and method6 Aug 2026US 2026/0231531 A1King Abdullah University of Science and Technology
- Semiconductor device and method of fabricating the same2 Jul 2026US 2026/0190397 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby3,970US 7,402,506 B2Eastman Kodak Company · 2008
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Method of fabricating oxide semiconductor device3,948US 7,468,304 B2Canon Kabushiki Kaisha · 2008