Semiconductor device and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYA-LING LEE
Life of this patent
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Abstract
A method of fabricating a semiconductor device, includes steps of forming a gate electrode on a dielectric layer; forming an insulator layer on the gate electrode; forming a channel layer to cover a portion of the insulator layer, wherein the channel layer comprises a first element from a group 12 and a second elements from a group 13 of the periodic table, and a composition of the first element is graded across at least a portion of a thickness of the channel layer; and forming a source electrode and a drain electrode on the channel layer, wherein the source electrode and the drain electrode are separated from each other.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a gate electrode on a first dielectric layer;
- forming an insulator layer on the gate electrode;
- forming a channel layer to cover a portion of the insulator layer, wherein the channel layer comprises a first element from a group 12 and a second element from a group 13 of the periodic table, and a composition of the first element is graded across at least a portion of a thickness of the channel layer;
- and
- forming a source electrode and a drain electrode on the channel layer, wherein the source electrode and the drain electrode are separated from each other.
A method of manufacturing a semiconductor device, comprising:
- depositing a gate electrode on a dielectric layer;
- depositing an insulator layer on the gate electrode;
- depositing a base film on the insulator layer;
- depositing a transition film on the base film;
- and
- depositing a capping film over the transition film,
- wherein the base film, the transition film, and the capping film comprise a first element from a group 12 and a second element from a group 13 of the periodic table, and a composition of the first element is graded across a thickness of the transition film.
A semiconductor device, comprising:
- a gate electrode;
- an insulator layer over the gate electrode;
- a channel layer over the insulator layer, wherein the channel layer comprises zinc and indium, and a composition of zinc is graded across at least a portion of a thickness of the channel layer;
- and
- a source electrode and a drain electrode disposed on the channel layer, wherein the source electrode and the drain electrode are spaced apart from each other.
Dependencies are inferred from the claim text.