Vertically integrated transistors and method

Abstract

A method for making a vertically integrated circuit includes providing an amorphous oxide semiconductor substrate, forming a first thin-film transistor over the amorphous oxide semiconductor substrate by using one or more deposition techniques at temperatures equal to or lower than 110° C.; depositing a buffer layer over the first thin-film transistor, wherein the buffer layer has a melting temperature higher than 110° C.; and forming a second thin-film transistor directly over the buffer layer by using the one or more deposition techniques at temperatures equal to or lower than 110° C., to form the vertically integrated circuit. Each of the first and second thin-film transistors has a metal oxide channel.

Dependencies are inferred from the claim text.