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US 12,707,689 B2Granted
Antimony-gallium-zinc-oxide materials
AssigneeMicron Technology, Inc.
InventorsAdharsh Rajagopal, Scott E. Sills, Sumeet C. Pandey, David M. Guzman
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Abstract
Systems, methods and apparatus are provided for transistors having a first source/drain region, a second source/drain region, and a channel region, wherein the channel region comprises an antimony-gallium-zinc-oxide (SbGZO) material.
Claims22
A transistor comprising:
- a first source/drain region;
- a second source/drain region;
- and
- a channel region, wherein the channel region comprises a composite of an antimony-gallium-zinc-oxide (SbGZO) material and an indium gallium zinc oxide material (IGZO), wherein the SbGZO material exhibits an increased n-type doping effect with respect to a GZO material, and
- wherein at least one of the first source/drain region and the second source/drain region comprises the SbGZO material.
2 more elements
A method of making a transistor, the method comprising:
- forming a first source/drain region;
- forming a second source/drain region;
- and forming a channel region, wherein the channel region is located between the first source/drain region and the second source/drain region, and wherein the channel region comprises a composite of an antimony-gallium-zinc-oxide (SbGZO) material and an indium gallium zinc oxide material (IGZO), wherein the SbGZO material exhibits an increased n-type doping effect with respect to a GZO material, and wherein at least one of the first source/drain region and the second source/drain region comprises the SbGZO material.
A memory cell, comprising:
- a transistor comprising:
- a first source/drain region;
- a second source/drain region;
- a channel region, wherein the channel region comprises a composite of an antimony-gallium-zinc-oxide (SbGZO) material and an indium gallium zinc oxide material (IGZO), wherein the SbGZO material exhibits an increased n-type doping effect with respect to a GZO material;
- and a storage node in operative communication with the transistor, wherein at least one of the first source/drain region and the second source/drain region comprises the SbGZO material.
2 more elements
A transistor comprising:
- a first source/drain region;
- a second source/drain region, wherein at least one of the first source/drain region and the second source/drain region comprises a composite of an antimony-gallium-zinc-oxide (SbGZO) material and an indium gallium zinc oxide material (IGZO), wherein the SbGZO material exhibits an increased n-type doping effect with respect to a GZO material;
- and
- a channel region, wherein the channel region comprises the SbGZO material.
1 more element
A transistor comprising:
- a first source/drain region;
- a second source/drain region;
- and a channel region comprising an oxide material doped with antimony, wherein at least one of the first source/drain region and the second source/drain region comprises a composite of an antimony-gallium-zinc-oxide (SbGZO) material and an indium gallium zinc oxide material (IGZO), and wherein the SbGZO material exhibits an increased n-type doping effect with respect to a GZO material.
Dependencies are inferred from the claim text.