H10P 14/3436
Being chalcogenide semiconductor materials not being oxides
Official title: {being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds}
H10P14/3436 (Being chalcogenide semiconductor materials not being oxides) appears on 855 US grants and 1,194 published applications in this corpus.
Search patents in H10P- Granted patents
- 855
- Published applications
- 1,194
- Assignees
- 437
- Inventors
- 2,286
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 5 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 6 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 0 |
| 2002 | 0 | 3 |
| 2003 | 2 | 3 |
| 2004 | 2 | 2 |
| 2005 | 2 | 10 |
| 2006 | 3 | 11 |
| 2007 | 3 | 11 |
| 2008 | 5 | 24 |
| 2009 | 13 | 23 |
| 2010 | 13 | 48 |
| 2011 | 33 | 78 |
| 2012 | 37 | 87 |
| 2013 | 45 | 85 |
| 2014 | 60 | 90 |
| 2015 | 55 | 73 |
| 2016 | 65 | 82 |
| 2017 | 65 | 67 |
| 2018 | 65 | 51 |
| 2019 | 43 | 52 |
| 2020 | 42 | 60 |
| 2021 | 36 | 68 |
| 2022 | 45 | 53 |
| 2023 | 44 | 84 |
| 2024 | 46 | 54 |
| 2025 | 45 | 50 |
| 2026 | 26 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Post CMOS compatible ferroelectric field effect transistor with AlScN dielectric and 2D material channel15 Sep 2026US 12,740,102 B2The Trustees of the University of Pennsylvania
- Integrated circuit structure and method for forming the same25 Aug 2026US 12,720,834 B2National Taiwan University
- Low temperature synthesis method of two dimensional material28 Jul 2026US 12,692,593 B2UIF (University Industry Foundation), Yonsei University
- Semiconductor device and method for forming the same21 Jul 2026US 12,690,250 B2National Taiwan University
- Apparatus and electronic devices including transistors comprising two-dimensional materials14 Jul 2026US 12,684,814 B2Micron Technology, Inc.
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314000 A1National Taiwan University
- Source/drain contacts connecting 2-d material layer and method for forming the same8 Oct 2026US 2026/0314276 A1National Yang Ming.Chiao Tung University
- Methods of fabricating thermally tuned optical devices containing chalcogenide thin films24 Sep 2026US 2026/0287938 A1The Government of the United States of America, as represented by the Secretary of the Navy
- In-situ production of h2s or h2se during growth of 2d transition metal disulfide and/or diselenide films27 Aug 2026US 2026/0255890 A1Merck Patent GmbH
- Process of Making Components for Electronic and Optical Devices Using Laser Processing on a Patterned Conductive Film13 Aug 2026US 2026/0233337 A1Government of the United States as Represented by the Secretary of the Air Force
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016
- Method for depositing a metal chalcogenide on a substrate by cyclical deposition421US 10,319,588 B2ASM IP Holding B. V. · 2019
- Semiconductor device using whiskers265US 5,362,972 AHitachi, Ltd. · 1994
- Method for optimal crystallization to obtain high electrical performance from chalcogenides265US 5,837,564 AMicron Technology, Inc. · 1998