In-situ production of h2s or h2se during growth of 2d transition metal disulfide and/or diselenide films

A method for forming a 2D transition metal disulfide and/or diselenide containing film on a substrate comprising generating one or more of H2S and H2Se in situ in a deposition chamber, wherein the forming of the 2D transition metal disulfide and/or diselenide containing film comprises one of:

• (A) a chemical vapor deposition (CVD) process comprising the steps of:
• (1) contacting a substrate in a deposition chamber with a vapor including
• (a) one or more externally supplied metal precursor and
• (b) one or more of (i) H2S and (ii) H2Se;
• and
• (2) optionally purging the vapor with an inert gas, or
• (B) a thermal atomic layer deposition (ALD) process or thermal ALD-like process comprising the steps of:
• (1) contacting a substrate in a deposition chamber with a first vapor including one of
• (a) one or more externally supplied metal precursor or
• (b) one or more of (i) H2S and (ii) H2Se;
• (2) purging the first vapor with an inert gas;
• (3) contacting a second vapor including the other of
• (a) the one or more externally supplied metal precursor or
• (b) the one or more of (i) H2S and (ii) H2Se;
• (4) optionally purging the second vapor with inert gas;
• and
• (5) sequentially repeating steps (1) through (4) until a desired thickness of the metal-containing film is obtained,
• wherein
• (i) the H2S is generated in-situ by reacting a compound of formula (R1R2R3Si)2S wherein R1, R2 and R3 are each independently hydrogen, a C1-C6 alkyl, C2-C6 alkenyl, C3-C6 aryl, benzyl or C2-C6 alkynyl group +NH3 within the deposition chamber, and
• (ii) the H2Se is generated in-situ by reacting a compound of formula (R1R2R3Si)2Se wherein R1, R2 and R3 are each independently hydrogen, a C1-C6 alkyl, C2-C6 alkenyl, C3-C6 aryl, benzyl or C2-C6 alkynyl group+NH3 within the deposition chamber.