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US 12,690,250 B2Granted
Semiconductor device and method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsShih-Yen Lin, Po-Cheng Tsai
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Abstract
A semiconductor device includes a substrate. A 2-D material channel layer is over the substrate, in which the 2-D material channel layer includes a channel region and source/drain regions on opposite sides of the channel region. Source/drain metals are over of the source/drain regions of the 2-D material channel layer. A gate metal is over the substrate and non-overlapping the 2-D material channel layer along a vertical direction, in which the gate metal is laterally separated from the 2-D material channel layer by an air gap.
Claims20
A method, comprising:
- forming a 2-D material layer over a substrate;
- forming a gate contact electrode and source/drain contact electrodes over the 2-D material layer;
- forming a gate metal extending from a top surface of the gate contact electrode to a sidewall of the gate contact electrode;
- forming a first patterned mask covering a channel region of the 2-D material layer, wherein the first patterned mask non-overlaps the gate contact electrode along a vertical direction;
- etching portions of the 2-D material layer uncovered by the first patterned mask, such that the channel region of the 2-D material layer is laterally separated from the gate contact electrode and the gate metal, wherein a lateral distance between the gate metal and the channel region of the 2-D material layer is less than a lateral distance between the gate contact electrode and the channel region of the 2-D material layer;
- and
- removing the first patterned mask.
4 more elements
A method, comprising:
- forming a 2-D material layer over a substrate;
- forming a gate contact electrode and source/drain contact electrodes over the 2-D material layer;
- forming a metal layer over the 2-D material layer, wherein the metal layer comprises source/drain metals and a gate metal, wherein the gate metal extends from a top surface of the gate contact electrode to a sidewall of the gate contact electrode;
- and
- patterning the 2-D material layer to define a channel region of the 2-D material layer between the source/drain metals in a first cross-sectional view, wherein the gate metal does not overlap the channel region of the 2-D material layer in the first cross-sectional view, and wherein in a second cross-sectional view that is perpendicular to the first cross-sectional view, a lateral distance between the gate metal and the channel region of the 2-D material layer is less than a lateral distance between the gate contact electrode and the channel region of the 2-D material layer.
2 more elements
A method, comprising:
- forming a 2-D material layer over a substrate;
- forming a 2-D material passivation layer over the 2-D material layer
- forming an electrode layer over the 2-D material passivation layer, the electrode layer comprising source/drain contact electrodes and a gate contact electrode;
- forming a metal layer over the 2-D material layer, wherein the metal layer comprises source/drain metals and a gate metal, wherein the gate metal extends from a top surface of the gate contact electrode to a sidewall of the gate contact electrode;
- and
- patterning the 2-D material layer and the 2-D material passivation layer to define a channel region of the 2-D material layer between the source/drain metals in a first cross-sectional view, in a second cross-sectional view that is perpendicular to the first cross-sectional view, the 2-D material passivation layer having a first portion covering a top surface of the channel region of the 2-D material layer, and a second portion below the gate contact electrode, and the first portion is spaced apart from the second portion, and wherein in the second cross-sectional view, a lateral distance between the gate metal and the channel region of the 2-D material layer is less than a lateral distance between the gate contact electrode and the channel region of the 2-D material layer.
3 more elements
Dependencies are inferred from the claim text.