Low temperature synthesis method of two dimensional material
AssigneeUIF (University Industry Foundation), Yonsei University
InventorsJong-Hyun Ahn, Ahn Tuan Hoang, Beom Jin Kim, Luhing Hu
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Abstract
A synthesis method of a 2D material according to the present disclosure includes preparing a substrate; maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second temperature which is lower than the first temperature; injecting carrier gas, a transition metal precursor, and a chalcogenide precursor into the first zone of the furnace; and depositing transition metal dichalcogenide on the target substrate in the second zone at the second temperature by the chemical vapor deposition.
Claims16
A synthesis method of a two-dimensional material, comprising:
- preparing a substrate;
- maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second temperature which is lower than the first temperature;
- injecting a carrier gas, a transition metal precursor, and a chalcogenide precursor into the first zone of the furnace;
- and
- depositing transition metal dichalcogenide on the target substrate in the second zone at the second temperature by chemical vapor deposition, thereby forming the two-dimensional material,
- wherein in the injecting, a solution in which the transition metal precursor is dissolved in a chalcogenide precursor solvent is vaporized to inject the transition metal precursor and the chalcogenide precursor together, and
- wherein in the injecting, the solution is bubbled with an inert gas to be vaporized.
Dependencies are inferred from the claim text.