Apparatus and electronic devices including transistors comprising two-dimensional materials

An apparatus, comprising:

• an array of memory cells comprising transistors, one or more of the transistors comprising:
• a crystalline material extending substantially transverse to a base material;
• a gate dielectric material adjacent to the crystalline material;
• one or more gates adjacent to the gate dielectric material;
• and
• a channel comprising a two-dimensional material, the channel including:
• a vertically extending portion directly intervening between the gate dielectric material and the crystalline material, the gate dielectric material extending along an entire height of the vertically extending portion of the channel, and
• a horizontally extending portion directly intervening between the gate dielectric material and at least one metal of the base material, the horizontally extending portion of the channel in direct contact with the gate dielectric material and the at least one metal of the base material.

An electronic device, comprising:

• memory cells, one or more of the memory cells comprising transistors, one or more of the transistors comprising:
• a channel region comprising opposing sidewalls separated by a pillar structure, the channel region comprising a two-dimensional material and the opposing sidewalls of the channel region substantially perpendicular to a base material;
• a gate dielectric region adjacent to the channel region, an upper surface of the gate dielectric region substantially coplanar with an upper surface of the channel region;
• and
• one or more gates adjacent to the gate dielectric region.