H10P 14/3414
Being group iiia-via materials
Official title: {being group IIIA-VIA materials}
H10P14/3414 (Being group iiia-via materials) appears on 6,488 US grants and 7,190 published applications in this corpus.
Search patents in H10P- Granted patents
- 6,488
- Published applications
- 7,190
- Assignees
- 1,343
- Inventors
- 8,732
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 35 | 0 |
| 1977 | 20 | 0 |
| 1978 | 20 | 0 |
| 1979 | 22 | 0 |
| 1980 | 26 | 0 |
| 1981 | 15 | 0 |
| 1982 | 7 | 0 |
| 1983 | 15 | 0 |
| 1984 | 12 | 0 |
| 1985 | 20 | 0 |
| 1986 | 16 | 0 |
| 1987 | 18 | 0 |
| 1988 | 20 | 0 |
| 1989 | 49 | 0 |
| 1990 | 36 | 0 |
| 1991 | 53 | 0 |
| 1992 | 53 | 0 |
| 1993 | 59 | 0 |
| 1994 | 53 | 0 |
| 1995 | 51 | 0 |
| 1996 | 32 | 0 |
| 1997 | 40 | 0 |
| 1998 | 51 | 0 |
| 1999 | 45 | 0 |
| 2000 | 48 | 0 |
| 2001 | 71 | 51 |
| 2002 | 86 | 177 |
| 2003 | 116 | 141 |
| 2004 | 113 | 154 |
| 2005 | 121 | 183 |
| 2006 | 115 | 198 |
| 2007 | 97 | 207 |
| 2008 | 105 | 237 |
| 2009 | 133 | 249 |
| 2010 | 181 | 328 |
| 2011 | 203 | 388 |
| 2012 | 272 | 388 |
| 2013 | 306 | 387 |
| 2014 | 399 | 431 |
| 2015 | 411 | 440 |
| 2016 | 437 | 430 |
| 2017 | 408 | 475 |
| 2018 | 352 | 340 |
| 2019 | 366 | 341 |
| 2020 | 303 | 330 |
| 2021 | 229 | 299 |
| 2022 | 198 | 250 |
| 2023 | 191 | 249 |
| 2024 | 188 | 236 |
| 2025 | 175 | 183 |
| 2026 | 96 | 98 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with nanowire heterojunction and manufacturing method thereof29 Sep 2026US 12,751,032 B2Enkris Semiconductor, Inc.
- Epitaxial structure of semiconductor device and manufacturing method thereof, and semiconductor device29 Sep 2026US 12,751,035 B2Dynax Semiconductor, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Method of manufacturing semiconductor device15 Sep 2026US 12,740,345 B2Sumitomo Electric Device Innovations, Inc.
- Semiconductor substrate, manufacturing method and manufacturing apparatus for semiconductor substrate, semiconductor device, manufacturing method and manufacturing apparatus for semiconductor device, and electronic device15 Sep 2026US 12,740,348 B2KYOCERA Corporation
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Group iii nitride semiconductor epitaxial wafer and electronic device1 Oct 2026US 2026/0304875 A1Panasonic Holdings Corporation
- Electro-absorption modulator and monolithic electro-photonic integrated circuit comprising an electro-absorption modulator and driver electronics24 Sep 2026US 2026/0287940 A1ElectroPhotonic-IC Inc.
- Semiconductor structure24 Sep 2026US 2026/0293282 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for producing compound thin films1,267US 4,058,430 A1977
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005