H10P 14/3421
Arsenides
Official title: {Arsenides}
H10P14/3421 (Arsenides) appears on 1,575 US grants and 1,095 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,575
- Published applications
- 1,095
- Assignees
- 477
- Inventors
- 2,592
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 27 | 0 |
| 1977 | 14 | 0 |
| 1978 | 17 | 0 |
| 1979 | 16 | 0 |
| 1980 | 22 | 0 |
| 1981 | 13 | 0 |
| 1982 | 7 | 0 |
| 1983 | 14 | 0 |
| 1984 | 8 | 0 |
| 1985 | 15 | 0 |
| 1986 | 13 | 0 |
| 1987 | 17 | 0 |
| 1988 | 17 | 0 |
| 1989 | 41 | 0 |
| 1990 | 27 | 0 |
| 1991 | 40 | 0 |
| 1992 | 50 | 0 |
| 1993 | 50 | 0 |
| 1994 | 48 | 0 |
| 1995 | 45 | 0 |
| 1996 | 29 | 0 |
| 1997 | 31 | 0 |
| 1998 | 37 | 0 |
| 1999 | 29 | 0 |
| 2000 | 22 | 0 |
| 2001 | 19 | 9 |
| 2002 | 24 | 44 |
| 2003 | 31 | 30 |
| 2004 | 19 | 32 |
| 2005 | 18 | 37 |
| 2006 | 26 | 30 |
| 2007 | 24 | 34 |
| 2008 | 15 | 32 |
| 2009 | 23 | 37 |
| 2010 | 18 | 31 |
| 2011 | 31 | 45 |
| 2012 | 32 | 40 |
| 2013 | 24 | 41 |
| 2014 | 41 | 51 |
| 2015 | 49 | 66 |
| 2016 | 74 | 82 |
| 2017 | 82 | 104 |
| 2018 | 79 | 66 |
| 2019 | 64 | 61 |
| 2020 | 57 | 66 |
| 2021 | 40 | 49 |
| 2022 | 41 | 34 |
| 2023 | 40 | 34 |
| 2024 | 27 | 24 |
| 2025 | 20 | 4 |
| 2026 | 8 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure comprising first III-V compound layerand second III-V compound layer and method of manufacture8 Sep 2026US 12,733,193 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Epitaxies of a chemical compound semiconductor25 Aug 2026US 12,721,055 B2National Chiao Tung University
- Reducing band-to-band tunneling in semiconductor devices9 Jun 2026US 12,652,829 B2SK Hynix NAND Product Solutions Corp.
- Transistor body-induced body leakage mitigation at low temperature2 Jun 2026US 12,648,175 B2Intel Corporation
- Architecture for InGaAs/GaAsSb superlattices on an InP substrate26 May 2026US 12,641,911 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electro-absorption modulator and monolithic electro-photonic integrated circuit comprising an electro-absorption modulator and driver electronics24 Sep 2026US 2026/0287940 A1ElectroPhotonic-IC Inc.
- Semiconductor structure24 Sep 2026US 2026/0293282 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Reducing band-to-band tunneling in semiconductor devices17 Sep 2026US 2026/0282456 A1
- Structure comprising a high thermal conductivity boron arsenide layer, and method of manufacture23 Jul 2026US 2026/0209990 A1
Most cited
By later US patents
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Apparatus for producing compound semiconductor devices591US 5,496,408 AMitsubishi Denki Kabushiki Kaisha · 1996
- Container for liquid metal organic compound569US 5,589,110 A1996
- Stretchable form of single crystal silicon for high performance electronics on rubber substrates525US 7,521,292 B2The Board of Trustees of the University of Illinois · 2009
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000