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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTakashi Motoda, Shoichi Karakida, Nobuaki Kaneno, Shigeki Kageyama
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An apparatus for producing a compound semiconductor layer includes a first flow rate controller for adjusting flow rates of respective material source gases, a gas mixing pipe for mixing the respective material source gases, gas distributing pipes for distributing gases and connected to the gas mixing pipe, a second flow rate controller for adjusting flow rates of the material source gases flowing through the gas distributing pipes and for supplying the material source gases to a reaction tube, a pressure detector for detecting pressure in the gas mixing pipe, and a third controller responsive to the pressure detector for controlling the second flow rate controller to maintain a constant pressure in the gas mixing pipe. Retardation of the gases between the first and second flow rate controllers is avoided, improving thickness uniformity in grown layers.
An apparatus for producing a compound semiconductor layer comprising:
An apparatus for producing a compound semiconductor layer comprising:
An apparatus for producing a compound semiconductor layer comprising:
An apparatus for producing a compound semiconductor layer comprising:
An apparatus for producing a compound semiconductor layer comprising:
Dependencies are inferred from the claim text.