Reducing band-to-band tunneling in semiconductor devices

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a body comprising germanium;
• a gate structure at least above the body, the gate structure including a gate dielectric and a gate electrode, the gate dielectric between the body and the gate electrode;
• a gate structure at least above the body, the gate structure including a gate electrode, gate spacers, a first gate dielectric along the sidewalls of the gate electrode, and a second gate dielectric between the body and the gate electrode;
• a source region and a drain region, the body between the source region and the drain region, wherein one of the source region or the drain region comprises a semiconductor material having a germanium concentration in excess of 75 atomic percent;
• and
• a spacer between the body and the one of the source region or the drain region, the spacer extending under one or both of the gate electrode and the gate dielectric, the spacer below and in direct contact with both the first gate dielectric and the gate spacers, the spacer including a semiconductor material comprising silicon, germanium, and carbon.