H10P 14/3416
Nitrides
Official title: {Nitrides}
H10P14/3416 (Nitrides) appears on 4,539 US grants and 5,762 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,539
- Published applications
- 5,762
- Assignees
- 1,016
- Inventors
- 6,122
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 5 | 0 |
| 1998 | 14 | 0 |
| 1999 | 17 | 0 |
| 2000 | 25 | 0 |
| 2001 | 50 | 40 |
| 2002 | 69 | 140 |
| 2003 | 93 | 113 |
| 2004 | 97 | 122 |
| 2005 | 98 | 134 |
| 2006 | 84 | 165 |
| 2007 | 72 | 161 |
| 2008 | 83 | 193 |
| 2009 | 100 | 197 |
| 2010 | 157 | 277 |
| 2011 | 164 | 309 |
| 2012 | 224 | 335 |
| 2013 | 259 | 325 |
| 2014 | 336 | 357 |
| 2015 | 333 | 336 |
| 2016 | 318 | 303 |
| 2017 | 279 | 340 |
| 2018 | 252 | 263 |
| 2019 | 278 | 259 |
| 2020 | 230 | 247 |
| 2021 | 181 | 238 |
| 2022 | 148 | 209 |
| 2023 | 147 | 221 |
| 2024 | 161 | 217 |
| 2025 | 157 | 172 |
| 2026 | 86 | 89 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with nanowire heterojunction and manufacturing method thereof29 Sep 2026US 12,751,032 B2Enkris Semiconductor, Inc.
- Epitaxial structure of semiconductor device and manufacturing method thereof, and semiconductor device29 Sep 2026US 12,751,035 B2Dynax Semiconductor, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Method of manufacturing semiconductor device15 Sep 2026US 12,740,345 B2Sumitomo Electric Device Innovations, Inc.
- Semiconductor substrate, manufacturing method and manufacturing apparatus for semiconductor substrate, semiconductor device, manufacturing method and manufacturing apparatus for semiconductor device, and electronic device15 Sep 2026US 12,740,348 B2KYOCERA Corporation
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Group iii nitride semiconductor epitaxial wafer and electronic device1 Oct 2026US 2026/0304875 A1Panasonic Holdings Corporation
- Semiconductor structure24 Sep 2026US 2026/0293282 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Strain relief trenches for epitaxial growth24 Sep 2026US 2026/0293541 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- High efficiency light emitting diodes from bipolar gallium nitride558US 5,210,051 ACree Research, Inc. · 1993