Methods for forming gate structures
AssigneeApplied Materials, Inc.
InventorsNicolas Louis Breil, Balasubramanian Pranatharthiharan
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Abstract
A method for forming a gate structure uses epitaxial growth to form the layers of the gate structure. The method includes epitaxially growing a first silicon germanium layer with a first germanium percentage on a silicon substrate, growing a first silicon layer on the first silicon germanium layer, growing a second silicon germanium layer with a second germanium percentage greater than the first germanium percentage, growing a second silicon layer on the second silicon germanium layer, selectively etching a portion of the first silicon germanium layer to form a recess; selectively depositing a low-k dielectric material to fill the recess, and selectively oxidizing the second silicon germanium layer throughout to form a silicon germanium oxide layer.
Claims20
A method for forming a gate channel structure, comprising:
- epitaxially growing a first silicon germanium layer with a first germanium percentage on a silicon substrate;
- epitaxially growing a first silicon layer on the first silicon germanium layer;
- epitaxially growing a second silicon germanium layer with a second germanium percentage greater than the first germanium percentage;
- epitaxially growing a second silicon layer on the second silicon germanium layer;
- selectively etching a portion of the first silicon germanium layer to form a recess;
- selectively depositing a low-k dielectric material to fill the recess;
- and
- selectively oxidizing the second silicon germanium layer throughout to form a silicon germanium oxide layer.
A method for forming a gate channel structure, comprising:
- epitaxially growing a first silicon germanium layer with a first germanium percentage on a silicon substrate, wherein the first germanium percentage is approximately 10% to approximately 40%;
- epitaxially growing a first silicon layer on the first silicon germanium layer;
- epitaxially growing a second silicon germanium layer with a second germanium percentage greater than the first germanium percentage, wherein the second germanium percentage is approximately 40% to approximately 80%;
- epitaxially growing a second silicon layer on the second silicon germanium layer;
- selectively etching a portion of the first silicon germanium layer to form a recess;
- selectively depositing a low-k dielectric material to fill the recess;
- and
- selectively oxidizing the second silicon germanium layer throughout to form a silicon germanium oxide layer after selectively depositing the low-k dielectric material, wherein the first silicon layer, the silicon germanium oxide layer, and the second silicon layer form a channel of the gate channel structure.
A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for forming a gate channel structure to be performed, the method comprising:
- epitaxially growing a first silicon germanium layer with a first germanium percentage on a silicon substrate;
- epitaxially growing a first silicon layer on the first silicon germanium layer;
- epitaxially growing a second silicon germanium layer with a second germanium percentage greater than the first germanium percentage;
- epitaxially growing a second silicon layer on the second silicon germanium layer;
- selectively etching a portion of the first silicon germanium layer to form a recess;
- selectively depositing a low-k dielectric material to fill the recess;
- and
- selectively oxidizing the second silicon germanium layer throughout to form a silicon germanium oxide layer.
Dependencies are inferred from the claim text.