H10P 14/3408
Silicon carbide
Official title: {Silicon carbide}
H10P14/3408 (Silicon carbide) appears on 1,373 US grants and 1,704 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,373
- Published applications
- 1,704
- Assignees
- 383
- Inventors
- 2,536
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 4 | 0 |
| 1988 | 6 | 0 |
| 1989 | 4 | 0 |
| 1990 | 6 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 7 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 5 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 5 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 5 |
| 2002 | 8 | 17 |
| 2003 | 9 | 20 |
| 2004 | 17 | 18 |
| 2005 | 14 | 22 |
| 2006 | 16 | 42 |
| 2007 | 21 | 35 |
| 2008 | 17 | 50 |
| 2009 | 21 | 31 |
| 2010 | 33 | 44 |
| 2011 | 29 | 61 |
| 2012 | 33 | 82 |
| 2013 | 54 | 69 |
| 2014 | 67 | 100 |
| 2015 | 86 | 138 |
| 2016 | 106 | 107 |
| 2017 | 114 | 120 |
| 2018 | 92 | 99 |
| 2019 | 110 | 143 |
| 2020 | 115 | 105 |
| 2021 | 79 | 76 |
| 2022 | 62 | 67 |
| 2023 | 41 | 76 |
| 2024 | 50 | 68 |
| 2025 | 61 | 72 |
| 2026 | 36 | 37 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition15 Sep 2026US 12,735,806 B2Xiamen University
- Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device1 Sep 2026US 12,727,400 B2Sumitomo Electric Industries, Ltd.
- Method for fabricating a polycrystalline silicon carbide carrier substrate1 Sep 2026US 12,727,401 B2Soitec
- Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate1 Sep 2026US 12,727,450 B2Icemos Technology Ltd.
- Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device25 Aug 2026US 12,720,830 B2Denso Corporation
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide semiconductor device1 Oct 2026US 2026/0304856 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Selective epitaxial formation of semiconductor films563US 8,278,176 B2ASM America, Inc. · 2012
- Method for forming silicon-containing materials during a photoexcitation deposition process535US 7,651,955 B2APPLIED Materials.Inc. · 2010
- Inhibitors for selective deposition of silicon containing films533US 7,939,447 B2ASM America, Inc. · 2011