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US 7,939,447 B2Granted
Inhibitors for selective deposition of silicon containing films
AssigneeASM America, Inc.
InventorsMatthias Bauer, Pierre Tomasini
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Abstract
A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.
Claims25
A method for depositing a single crystalline silicon film, comprising:
- providing a substrate disposed within a chamber;
- introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source that reacts to decelerate reactions between the silicon precursor and the chlorine-containing etchant;
- and
- selectively depositing a crystalline Si-containing film onto the substrate.
1 more element
A method of depositing a crystalline Si-containing film, comprising:
- providing a substrate disposed within a chamber;
- introducing a silicon precursor and a chlorine gas (Cl2) to the chamber;
- decelerating reactions between the silicon precursor and the chlorine gas by introducing a carbon-containing inhibitor source to the chamber;
- and
- selectively depositing the single crystalline Si-containing film onto the substrate.
2 more elements
Dependencies are inferred from the claim text.