Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

A silicon carbide epitaxial substrate comprising:

• a silicon carbide substrate;
• and
• a silicon carbide epitaxial layer on the silicon carbide substrate,
• wherein the silicon carbide substrate has a first main surface located opposite to an interface between the silicon carbide substrate and the silicon carbide epitaxial layer,
• the silicon carbide epitaxial layer has a second main surface located opposite to the interface,
• when the second main surface is divided into a plurality of square regions each having each side having a length of 10 mm, the plurality of square regions are constituted of a plurality of outer peripheral regions located at an outermost periphery of the plurality of square regions and a plurality of central regions surrounded by the plurality of outer peripheral regions,
• when a maximum value of local total indicated reading (LTIR) of the silicon carbide epitaxial substrate in the plurality of outer peripheral regions is defined as a first value and a maximum value of local total indicated reading (LTIR) of the silicon carbide epitaxial substrate in the plurality of central regions is defined as a second value, a value obtained by dividing the first value by the second value is 0.8 to 1.2,
• an area density of a bump in the second main surface is 0.5/cm2 or less,
• an area of the bump is 100 μm2 or less when viewed in a direction perpendicular to the second main surface, and
• a height of the bump is 0.01 μm to 0.1 μm in the direction perpendicular to the second main surface.