H10P 14/3412
Including tin
Official title: {including tin}
H10P14/3412 (Including tin) appears on 143 US grants and 165 published applications in this corpus.
Search patents in H10P- Granted patents
- 143
- Published applications
- 165
- Assignees
- 77
- Inventors
- 322
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 3 |
| 2004 | 0 | 1 |
| 2005 | 2 | 2 |
| 2006 | 0 | 4 |
| 2007 | 3 | 3 |
| 2008 | 0 | 3 |
| 2009 | 3 | 4 |
| 2010 | 5 | 6 |
| 2011 | 5 | 3 |
| 2012 | 2 | 7 |
| 2013 | 2 | 7 |
| 2014 | 6 | 7 |
| 2015 | 6 | 11 |
| 2016 | 9 | 11 |
| 2017 | 7 | 10 |
| 2018 | 6 | 7 |
| 2019 | 12 | 15 |
| 2020 | 8 | 15 |
| 2021 | 12 | 11 |
| 2022 | 13 | 10 |
| 2023 | 7 | 11 |
| 2024 | 7 | 5 |
| 2025 | 8 | 7 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multigate transistors with capping layers and a buffer layer comprising germanium11 Aug 2026US 12,707,681 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing thereof26 May 2026US 12,641,837 B2National Taiwan University
- Methods of forming silicon germanium structures3 Feb 2026US 12,543,516 B2ASM IP Holding B. V.
- Semiconductor arrangement and method of manufacture9 Dec 2025US 12,495,583 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Source electrode and drain electrode protection for nanowire transistors16 Sep 2025US 12,419,091 B2Intel Corporation
- Method of manufacturing a semiconductor device and a semiconductor device11 Jun 2026US 2026/0164691 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming a semiconductor stack on a substrate including a semimetal liner5 Mar 2026US 2026/0068187 A1ASM IP Holding B. V.
- Field effect transistor having replacement source/drains and related methods27 Nov 2025US 2025/0366077 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate transistors and methods of forming the same13 Nov 2025US 2025/0351464 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Tin oxide and tin carbide materials for semiconductor patterning applications10 Jul 2025US 2025/0226235 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon543US 7,589,003 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009
- Inhibitors for selective deposition of silicon containing films533US 7,939,447 B2ASM America, Inc. · 2011
- SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn521US 7,598,513 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009
- Carrier channel with element concentration gradient distribution and fabrication method thereof520US 9,196,483 B1National Tsing Hua University · 2015