GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
AssigneeArizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law
InventorsJohn Kouvetakis, Matthew Bauer, Jose Menendez, Chang Wu Hu, Ignatius S. T. Tsong, John Tolle
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Abstract
A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.
Claims22
A semiconductor structure comprising:
- a substrate and a SnxGe1-x layer formed directly on the substrate, wherein x has a value from about 0.02 to about 0.20, and wherein the substrate consists essentially of silicon.
A method for depositing an epitaxial Ge—Sn layer on a substrate in a chemical vapor deposition reaction chamber, the method comprising introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate.
A method for depositing a strained Ge layer on a silicon substrate with a Ge—Sn buffer layer in a chemical vapor deposition reaction chamber, the method comprising introducing into the chamber a combination comprising SnD4 and Ge2H6 under conditions whereby the Ge—Sn layer is formed on the substrate and dehydrogenating Ge2H6 under conditions whereby the Ge layer is formed on the Ge—Sn buffer layer.
Dependencies are inferred from the claim text.