H10D 64/68
Characterised by the insulator
Official title: characterised by the insulator, e.g. by the gate insulator
H10D64/68 (Characterised by the insulator) appears on 11,459 US grants and 12,996 published applications in this corpus.
Search patents in H10D- Granted patents
- 11,459
- Published applications
- 12,996
- Assignees
- 1,146
- Inventors
- 12,799
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 13 | 0 |
| 1978 | 5 | 0 |
| 1979 | 3 | 0 |
| 1980 | 6 | 0 |
| 1981 | 11 | 0 |
| 1982 | 6 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 10 | 0 |
| 1986 | 11 | 0 |
| 1987 | 9 | 0 |
| 1988 | 15 | 0 |
| 1989 | 15 | 0 |
| 1990 | 17 | 0 |
| 1991 | 16 | 0 |
| 1992 | 17 | 0 |
| 1993 | 21 | 0 |
| 1994 | 35 | 0 |
| 1995 | 39 | 0 |
| 1996 | 39 | 0 |
| 1997 | 40 | 0 |
| 1998 | 63 | 0 |
| 1999 | 110 | 0 |
| 2000 | 132 | 0 |
| 2001 | 180 | 65 |
| 2002 | 191 | 254 |
| 2003 | 219 | 289 |
| 2004 | 294 | 360 |
| 2005 | 248 | 432 |
| 2006 | 287 | 501 |
| 2007 | 251 | 420 |
| 2008 | 239 | 431 |
| 2009 | 268 | 428 |
| 2010 | 366 | 411 |
| 2011 | 365 | 378 |
| 2012 | 339 | 481 |
| 2013 | 425 | 544 |
| 2014 | 554 | 582 |
| 2015 | 610 | 782 |
| 2016 | 756 | 774 |
| 2017 | 702 | 657 |
| 2018 | 636 | 575 |
| 2019 | 635 | 697 |
| 2020 | 672 | 764 |
| 2021 | 537 | 599 |
| 2022 | 506 | 560 |
| 2023 | 441 | 618 |
| 2024 | 474 | 565 |
| 2025 | 399 | 496 |
| 2026 | 217 | 333 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Highly integrated semiconductor device6 Oct 2026US 12,757,404 B2Samsung Electronics Co., Ltd.
- Field effect transistor, capacitor, and electronic apparatus including domain-controlled ferroelectric material6 Oct 2026US 12,757,449 B2Samsung Electronics Co., Ltd.
- Integrated circuit structures with cavity spacers6 Oct 2026US 12,757,473 B2Intel Corporation
- Ferroelectric tunnel junction devices for low voltage and low temperature operation6 Oct 2026US 12,757,474 B2Intel Corporation
- Manufacturing method of semiconductor structure and semiconductor structure29 Sep 2026US 12,751,069 B2Changxin Jidian (Beijing) Memory Technologies Co., Ltd.
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method of the same8 Oct 2026US 2026/0313974 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device structure and method for forming the same8 Oct 2026US 2026/0313987 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective high-k formation in gate-last process8 Oct 2026US 2026/0314004 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000