H10D 64/681
Having a compositional variation
Official title: {having a compositional variation, e.g. multilayered}
H10D64/681 (Having a compositional variation) appears on 5,605 US grants and 6,269 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,605
- Published applications
- 6,269
- Assignees
- 706
- Inventors
- 7,238
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 10 | 0 |
| 1978 | 4 | 0 |
| 1979 | 3 | 0 |
| 1980 | 5 | 0 |
| 1981 | 10 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 5 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 10 | 0 |
| 1989 | 9 | 0 |
| 1990 | 5 | 0 |
| 1991 | 4 | 0 |
| 1992 | 10 | 0 |
| 1993 | 10 | 0 |
| 1994 | 22 | 0 |
| 1995 | 22 | 0 |
| 1996 | 13 | 0 |
| 1997 | 18 | 0 |
| 1998 | 29 | 0 |
| 1999 | 50 | 0 |
| 2000 | 68 | 0 |
| 2001 | 99 | 37 |
| 2002 | 100 | 149 |
| 2003 | 124 | 172 |
| 2004 | 171 | 218 |
| 2005 | 141 | 253 |
| 2006 | 183 | 278 |
| 2007 | 138 | 224 |
| 2008 | 145 | 253 |
| 2009 | 156 | 237 |
| 2010 | 199 | 203 |
| 2011 | 211 | 186 |
| 2012 | 191 | 229 |
| 2013 | 188 | 221 |
| 2014 | 268 | 258 |
| 2015 | 262 | 343 |
| 2016 | 345 | 355 |
| 2017 | 341 | 294 |
| 2018 | 282 | 255 |
| 2019 | 287 | 305 |
| 2020 | 292 | 327 |
| 2021 | 244 | 270 |
| 2022 | 218 | 259 |
| 2023 | 194 | 293 |
| 2024 | 211 | 243 |
| 2025 | 186 | 238 |
| 2026 | 96 | 169 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Manufacturing method of semiconductor structure and semiconductor structure29 Sep 2026US 12,751,069 B2Changxin Jidian (Beijing) Memory Technologies Co., Ltd.
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Semiconductor device structure having gate dielectric layers with different dielectric compositions and method of forming the same15 Sep 2026US 12,740,136 B2Mediatek Inc.
- Semiconductor device and fabricating the same8 Sep 2026US 12,733,253 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with voltage resistant structure1 Sep 2026US 12,727,212 B2Rohm Co., Ltd.
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Large dimension metal gate field-effect transistor (fet) with metal gate dummy structures8 Oct 2026US 2026/0314024 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Diamond semiconductor device and method for manufacturing diamond semiconductor device1 Oct 2026US 2026/0304898 A1Power Diamond Systems, Inc.
- Tub forksheet and cfet architectures for reduced spacing of complementary transistors1 Oct 2026US 2026/0304946 A1Intel Corporation
- Three-dimensional memory device containing low oxygen density dipole-containing blocking dielectric layer1 Oct 2026US 2026/0305502 A1SanDisk Technologies LLC
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Atomic layer-deposited LaAlO3 films for gate dielectrics693US 7,045,430 B2Micron Technology, Inc. · 2006
- Method of forming a multilayer dielectric stack677US 6,627,503 B2Sharp Laboratories of America, Inc. · 2003
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006