Three-dimensional memory device containing low oxygen density dipole-containing blocking dielectric layer

Abstract

A memory device includes an alternating stack of insulating layers and electrically conductive layers arranged along a vertical direction, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film surrounding the vertical semiconductor channel. The memory film includes a blocking dielectric film, a tunneling dielectric liner and a charge storage layer located between the blocking dielectric film and the tunneling dielectric liner. The blocking dielectric film includes an inner silicon oxide blocking dielectric layer and an outer metal oxide blocking dielectric layer having a lower atomic density of oxygen atoms than the inner silicon oxide blocking dielectric layer.

Dependencies are inferred from the claim text.