Diamond semiconductor device and method for manufacturing diamond semiconductor device
AssigneePower Diamond Systems, Inc.
InventorsKoji AMAZUTSUMI, Tatsuya FUJISHIMA, Hiroshi KAWARADA
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Abstract
Provided is a diamond semiconductor device having a trench part on a front surface, comprising: a diamond layer; a diamond epitaxial layer provided on the diamond layer; a front-surface-side insulating film provided above the epitaxial layer; and a front-surface-side electrode provided on the front-surface-side insulating film, wherein the front-surface-side insulating film includes an embedded insulating part which is filled into an inside of the trench part to be in contact with a trench sidewall of the trench part.
Claims20
A diamond semiconductor device having a trench part on a front surface, comprising:
- a diamond layer;
- a diamond epitaxial layer provided on the diamond layer;
- a front-surface-side insulating film provided above the epitaxial layer;
- and
- a front-surface-side electrode provided on the front-surface-side insulating film, wherein
- the front-surface-side insulating film includes an embedded insulating part which is filled into an inside of the trench part to be in contact with a trench sidewall of the trench part.
A method for manufacturing a diamond semiconductor device having a trench part on a front surface, comprising:
- a step for providing a diamond layer;
- a step for forming a diamond epitaxial layer on the diamond layer;
- a step for forming a front-surface-side insulating film above the epitaxial layer;
- and
- a step for forming a front-surface-side electrode on the front-surface-side insulating film, wherein
- the step for forming the front-surface-side insulating film includes a step for forming an embedded insulating part which is filled into an inside of the trench part to be in contact with a trench sidewall of the trench part.
Dependencies are inferred from the claim text.