H10D 64/66
Electrodes having a conductor capacitively coupled to a semiconductor by an insulator
Official title: Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
H10D64/66 (Electrodes having a conductor capacitively coupled to a semiconductor by an insulator) appears on 18,069 US grants and 20,103 published applications in this corpus.
Search patents in H10D- Granted patents
- 18,069
- Published applications
- 20,103
- Assignees
- 1,540
- Inventors
- 18,340
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 12 | 0 |
| 1977 | 17 | 0 |
| 1978 | 9 | 0 |
| 1979 | 11 | 0 |
| 1980 | 10 | 0 |
| 1981 | 20 | 0 |
| 1982 | 18 | 0 |
| 1983 | 15 | 0 |
| 1984 | 10 | 0 |
| 1985 | 21 | 0 |
| 1986 | 26 | 0 |
| 1987 | 26 | 0 |
| 1988 | 30 | 0 |
| 1989 | 28 | 0 |
| 1990 | 32 | 0 |
| 1991 | 32 | 0 |
| 1992 | 30 | 0 |
| 1993 | 35 | 0 |
| 1994 | 54 | 0 |
| 1995 | 65 | 0 |
| 1996 | 63 | 0 |
| 1997 | 80 | 0 |
| 1998 | 130 | 0 |
| 1999 | 217 | 0 |
| 2000 | 260 | 0 |
| 2001 | 336 | 122 |
| 2002 | 314 | 398 |
| 2003 | 382 | 411 |
| 2004 | 413 | 522 |
| 2005 | 373 | 644 |
| 2006 | 421 | 688 |
| 2007 | 347 | 579 |
| 2008 | 347 | 660 |
| 2009 | 392 | 618 |
| 2010 | 531 | 577 |
| 2011 | 518 | 555 |
| 2012 | 468 | 661 |
| 2013 | 597 | 752 |
| 2014 | 787 | 884 |
| 2015 | 919 | 1197 |
| 2016 | 1177 | 1179 |
| 2017 | 1124 | 1071 |
| 2018 | 1014 | 1008 |
| 2019 | 1074 | 1112 |
| 2020 | 1080 | 1213 |
| 2021 | 871 | 973 |
| 2022 | 812 | 962 |
| 2023 | 713 | 961 |
| 2024 | 764 | 887 |
| 2025 | 705 | 874 |
| 2026 | 339 | 595 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 64/68Characterised by the insulator11,459
- H10D 64/667The conductor comprising a layer of alloy material, compound material or organic4,924
- H10D 64/661The conductor comprising a layer of silicon contacting the insulator3,199
- H10D 64/665The conductor comprising a layer of elemental metal contacting the insulator2,069
- H10D 64/671The conductor having lateral variation in doping or structure1,244
- H10D 64/675Gate sidewall spacers840
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- Semiconductor device and manufacturing method of the same8 Oct 2026US 2026/0313974 A1Semiconductor Energy Laboratory Co.Ltd.
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016