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US 7,064,346 B2Granted
Transistor and semiconductor device
AssigneeJapan Science and Technology Agency
InventorsMasashi Kawasaki, Hideo Ohno
Life of this patent
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Abstract
In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base electrode 44, the emitter electrode 45 and the collector electrode 46 are formed respectively on the base 41, the emitter 42 and the collector 43. As the n-type transparent semiconductor, for example, n-type ZnO is used. The n-type ZnO is ZnO doped with, for example, group III elements, group VII elements. As the p-type transparent semiconductor, for example, p-type ZnO is used. The p-type ZnO is ZnO doped with, for example, group I elements and group V elements.
Claims24
A transistor, comprising:
- an emitter, a collector and a base selected from the group consisting of:
- (a) an emitter and a collector made of a transparent n-type semiconductor, and a base made of a transparent p-type semi conductor, and
- (b) a base made of a transparent n-type semiconductor, and an emitter and a collector made of a transparent p-type semiconductor,
- said n-type semiconductor comprising any one of zinc oxide ZnO, zinc magnesium oxide MgxZn1-x O, zinc cadmium oxide Cdx Zn1-x O and cadmium oxide CdO, doped with group III elements or group VII elements, and
- said transparent p-type semiconductor comprising any one of zinc oxide ZnO, zinc magnesium oxide Mgx Zn1-x O, zinc cadmium oxide Cdx Zn1-x O and cadmium oxide CdO, doped with group I elements or group V elements;
- and
- a base electrode, an emitter electrode and a collector electrode, in which
- (1) a transparent conductive material doped or undoped with any one of group III elements, group VII elements and group I elements,
- (2) a transparent conductor, or
- (3) an untransparent electrode material
- are used partially or entirely, the base electrode, the emitter electrode and the collector electrode being respectively formed on said base, said emitter and said collector.
8 more elements
A method of making a transistor, comprising:
- depositing an emitter, a collector, and a base, wherein said emitter, said collector and said base are selected from the group consisting of:
- (a) an emitter and a collector made of a transparent n-type semiconductor, and a base made of a transparent p-type semiconductor, and
- (b) a base made of a transparent n-type semiconductor, and an emitter and a collector made of a transparent p-type semiconductor,
- said n-type semiconductor comprising any one of ZnO, zinc magnesium oxide Mgx Zn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, and said n-type semiconductor is doped with group III elements or group VII elements;
- depositing a base, an emitter and a collector, wherein said base, or said emitter and said collector are made of a transparent p-type semiconductor comprising at least one of ZnO, zinc magnesium oxide MgxZn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, said p-type semiconductor doped with group I elements or group V elements;
- and
- depositing a base electrode, an emitter electrode and a collector electrode, wherein said base electrode, said emitter electrode and said collector electrode comprise a transparent conductive material comprising conductive ZnO doped or undoped with any one of group III elements, group VII elements and group I elements, or a transparent conductive material comprising at least one of In2O3, SnO2 and (In—Sn)Ox,or an untransparent electrode material and
- wherein said base electrode, said emitter electrode and said collector electrode are respectively formed on said base, said emitter, and said collector.
5 more elements
A method of making a transistor, comprising:
- providing an emitter and a collector, or a base, wherein said emitter, said collector and said base are selected from the group consisting of:
- (a) an emitter and a collector made of a transparent n-type semiconductor, and a base made of a transparent p-type semiconductor, and
- (b) a base made of a transparent n-type semiconductor, and an emitter and a collector made of a transparent p-type semiconductor,
- said n-type semiconductor comprising at least one of ZnO, zinc magnesium oxide MgxZn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, and said n-type semiconductor is doped with at least one of group III elements and group VII elements;
- providing a base, or an emitter and a collector, wherein said base, or said emitter and said collector are made of a transparent p-type semiconductor comprising at least one of zinc oxide ZnO, zinc magnesium oxide MgxZn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, and said p-type semiconductor is doped at least one of with group I elements and group V elements;
- and
- providing a base electrode, an emitter electrode, and a collector electrode;
- wherein said base electrode, said emitter electrode, and said collector electrode respectively are formed on said base, said emitter, and said collector;
- wherein said base electrode, said emitter electrode, and said collector electrode comprise:
- (1) a transparent conductive material comprising conductive ZnO that is undoped and conductive ZnO that is doped with at least one of group III elements, group VII elements, and group I elements;
- or
- (2) a transparent conductor comprising at least one of In2O3, SnO2and (In—Sn)Ox;
- or
- (3) an un-transparent electrode material.
11 more elements
A method of using a transistor, said transistor comprising:
- an emitter and a collector, or a base, wherein said emitter, said collector and said base are selected from the group consisting of:
- (a) an emitter and a collector made of a transparent n-type semiconductor, and a base made of a transparent p-type semiconductor, and
- (b) a base made of a transparent n-type semiconductor, and an emitter and a collector made of a transparent p-type semiconductor,
- said n-type semiconductor comprising any one of zinc oxide ZnO, zinc magnesium oxide MgxZn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, and said n-type semiconductor is doped with at least one of group III elements and group VII elements;
- or
- a base, or an emitter and a collector, wherein said base, or said emitter and said collector are made of a transparent p-type semiconductor comprising any one of zinc oxide ZnO, zinc magnesium oxide MgxZn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, and said p-type semiconductor is doped with at least one of group I elements and group V elements;
- a base electrode, an emitter electrode, and a collector electrode;
- wherein said base electrode, said emitter electrode, and the collector electrode are respectively formed on said base, said emitter, and said collector;
- wherein said base electrode, said emitter electrode, and said collector electrode comprise:
- (1) a transparent conductive material comprising one of conductive ZnO that is undoped and conductive ZnO that is doped with at least one of group III elements, group VII elements, and group I elements;
- or
- (2) a transparent conductor comprising at least one of In2O3, SnO2 and (In—Sn)Ox,or
- (3) an un-transparent electrode material;
- and
- said method comprising applying a voltage across at least one electrode of said transistor.
12 more elements
A transistor, comprising:
- an emitter, a collector and a base made of a transparent n-type semiconductor selected from the group consisting of:
- (a) an emitter and a collector made of a transparent n-type semiconductor, and a base made of a transparent p-type semiconductor, and
- (b) a base made of a transparent n-type semiconductor, and an emitter and a collector made of a transparent p-type semiconductor,
- said transparent n-type semiconductor comprising at least one of zinc oxide ZnO, zinc magnesium oxide MgxZn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, and said transparent n-type semiconductor is doped with at least one of group III elements and group VII elements;
- a base, or an emitter and a collector made of a transparent p-type semiconductor, said transparent p-type semiconductor comprising any one of zinc oxide ZnO, zinc magnesium oxide MgxZn1-xO, zinc cadmium oxide CdxZn1-xO, and cadmium oxide CdO, and said transparent p-type semiconductor is doped with at least one of group I elements and group V elements;
- and
- a base electrode, an emitter electrode, and a collector electrode;
- wherein said base electrode, said emitter electrode, and said collector electrode are respectively formed on said base, said emitter, and said collector;
- and
- wherein said base electrode, said emitter electrode, and said collector electrode comprise:
- (1) a transparent conductive material comprising one of conductive ZnO that is un-doped and conductive ZnO that is doped with at least one of group III elements, group VII elements, and group I elements;
- or
- (2) a transparent conductor comprising at least one of In2O3, SnO2, and (In—Sn)Ox, or
- (3) an un-transparent electrode material.
11 more elements
Dependencies are inferred from the claim text.