H10D 64/661
The conductor comprising a layer of silicon contacting the insulator
Official title: {the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation (having lateral variation in the gate structure H10D64/671)}
H10D64/661 (The conductor comprising a layer of silicon contacting the insulator) appears on 3,199 US grants and 3,169 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,199
- Published applications
- 3,169
- Assignees
- 524
- Inventors
- 4,883
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 4 | 0 |
| 1979 | 6 | 0 |
| 1980 | 1 | 0 |
| 1981 | 5 | 0 |
| 1982 | 7 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 5 | 0 |
| 1986 | 12 | 0 |
| 1987 | 14 | 0 |
| 1988 | 6 | 0 |
| 1989 | 6 | 0 |
| 1990 | 10 | 0 |
| 1991 | 13 | 0 |
| 1992 | 10 | 0 |
| 1993 | 12 | 0 |
| 1994 | 11 | 0 |
| 1995 | 19 | 0 |
| 1996 | 20 | 0 |
| 1997 | 22 | 0 |
| 1998 | 46 | 0 |
| 1999 | 65 | 0 |
| 2000 | 79 | 0 |
| 2001 | 108 | 44 |
| 2002 | 91 | 100 |
| 2003 | 110 | 79 |
| 2004 | 84 | 115 |
| 2005 | 76 | 125 |
| 2006 | 77 | 129 |
| 2007 | 61 | 99 |
| 2008 | 72 | 147 |
| 2009 | 83 | 125 |
| 2010 | 114 | 88 |
| 2011 | 104 | 87 |
| 2012 | 76 | 83 |
| 2013 | 80 | 113 |
| 2014 | 126 | 163 |
| 2015 | 182 | 255 |
| 2016 | 258 | 220 |
| 2017 | 188 | 175 |
| 2018 | 149 | 139 |
| 2019 | 154 | 155 |
| 2020 | 146 | 137 |
| 2021 | 105 | 120 |
| 2022 | 93 | 116 |
| 2023 | 78 | 90 |
| 2024 | 97 | 78 |
| 2025 | 80 | 85 |
| 2026 | 22 | 102 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Wide band gap semiconductor device with surface insulating film22 Sep 2026US 12,745,445 B2Rohm Co., Ltd.
- Semiconductor devices and methods of manufacturing the same8 Sep 2026US 12,733,156 B2Samsung Electronics Co., Ltd.
- Semiconductor device with voltage resistant structure1 Sep 2026US 12,727,212 B2Rohm Co., Ltd.
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Power mosfet device having a source region embedded via epitaxial growth and manufacturing method for power mosfet device1 Oct 2026US 2026/0304823 A1Chongqing Alpha and Omega Semiconductor Limited
- Sic device with vertical field plates and method of manufacturing the same1 Oct 2026US 2026/0304886 A1United Microelectronics Corp.
- Laterally-diffused metal-oxide-semiconductor devices with a field plate and a recessed drain1 Oct 2026US 2026/0304887 A1Globalfoundries Singapore Pte. Ltd.
Most cited
By later US patents
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015
- Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment555US 4,479,831 ABurroughs Corporation · 1984
- Gate structure for semiconductor device527US 8,847,293 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Reliable semiconductor device and method of manufacturing the same526US 6,713,824 B1Kabushiki Kaisha Toshiba · 2004