H10D 64/662
The conductor further comprising additional layers
Official title: {the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures}
H10D64/662 (The conductor further comprising additional layers) appears on 1,988 US grants and 1,922 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,988
- Published applications
- 1,922
- Assignees
- 365
- Inventors
- 3,242
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 5 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 5 | 0 |
| 1986 | 9 | 0 |
| 1987 | 12 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 8 | 0 |
| 1991 | 12 | 0 |
| 1992 | 10 | 0 |
| 1993 | 7 | 0 |
| 1994 | 7 | 0 |
| 1995 | 10 | 0 |
| 1996 | 13 | 0 |
| 1997 | 20 | 0 |
| 1998 | 37 | 0 |
| 1999 | 49 | 0 |
| 2000 | 67 | 0 |
| 2001 | 96 | 41 |
| 2002 | 77 | 92 |
| 2003 | 98 | 72 |
| 2004 | 69 | 95 |
| 2005 | 72 | 108 |
| 2006 | 66 | 103 |
| 2007 | 51 | 83 |
| 2008 | 60 | 123 |
| 2009 | 72 | 106 |
| 2010 | 97 | 69 |
| 2011 | 81 | 68 |
| 2012 | 58 | 57 |
| 2013 | 62 | 79 |
| 2014 | 85 | 103 |
| 2015 | 89 | 91 |
| 2016 | 93 | 81 |
| 2017 | 60 | 45 |
| 2018 | 41 | 46 |
| 2019 | 58 | 65 |
| 2020 | 54 | 58 |
| 2021 | 43 | 69 |
| 2022 | 46 | 77 |
| 2023 | 46 | 49 |
| 2024 | 64 | 46 |
| 2025 | 45 | 44 |
| 2026 | 12 | 52 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Wide band gap semiconductor device with surface insulating film22 Sep 2026US 12,745,445 B2Rohm Co., Ltd.
- Semiconductor device with voltage resistant structure1 Sep 2026US 12,727,212 B2Rohm Co., Ltd.
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Semiconductor device structure and methods of forming the same25 Aug 2026US 12,720,824 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fluorine-containing plasma treatment in semiconductor process8 Oct 2026US 2026/0314025 A1Texas Instruments Incorporated
- Semiconductor device and semiconductor memory24 Sep 2026US 2026/0293141 A1Kioxia Corporation
- Electronic circuit with selector gate having a ntride-based dielectric barrier and methods of manufacturing thereof24 Sep 2026US 2026/0293270 A1Micron Technology, Inc.
- Method of reducing metal gate resistance for next generation nmos device application17 Sep 2026US 2026/0282480 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015
- Method of forming a transistor with a strained channel317US 6,492,216 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Method of manufacturing a semiconductor device which includes forming a dummy gate210US 6,054,355 AKabushiki Kaisha Toshiba · 2000