Electronic circuit with selector gate having a ntride-based dielectric barrier and methods of manufacturing thereof

Abstract

A method includes forming a tier stack of an electronic circuit, the tier stack including a plurality of tiers. A tier includes a first layer of first dielectric material and a second layer of second dielectric material. The method further includes forming a selector gate within the tier stack at the second layer of at least one of the plurality of tiers. The selector gate includes a nitride-based dielectric barrier adjacent to a metalloid layer. The metalloid layer includes a first metalloid. The method further includes selectively etching the second layer of second dielectric material of each of the plurality of tiers to form a void within each of the plurality of tiers. The method further includes filling the void within each of the plurality of tiers with a conductive material to form a plurality of conductive lines.

Dependencies are inferred from the claim text.