Semiconductor device and semiconductor memory

A semiconductor device comprising a first transistor and a second transistor that share one end, the semiconductor device comprising:

• a substrate including a first impurity diffusion region and a second impurity diffusion region, the first impurity diffusion region corresponding to the one end of the first transistor and the second transistor, the second impurity diffusion region having a higher impurity concentration than the first impurity diffusion region in the first impurity diffusion region, wherein a first silicide part is formed on the second impurity diffusion region;
• a first insulating film and a second insulating film provided in a first direction on the substrate, the first insulating film corresponding to a gate insulating film of the first transistor, and the second insulating film corresponding to a gate insulating film of the second transistor;
• a first conductive layer provided on the first insulating film and corresponding to a gate electrode of the first transistor, wherein a second silicide portion is formed on the first conductive layer except a part of the first conductive layer;
• a second conductive layer provided on the second insulating film and corresponding to a gate electrode of the second transistor, wherein a third silicide portion is formed on the second conductive layer;
• and
• a first contact plug, a second contact plug, and a third contact plug respectively coupled to the first silicide part, the second silicide part, and the third silicide part, wherein
• in plan view, the part of the first conductive layer is disposed between the first silicide part and the second silicide part.