Method of manufacturing a semiconductor device which includes forming a dummy gate

A method of manufacturing a semiconductor device comprising the steps of:

• forming a gate insulator film and a first conductive film on a semiconductor substrate;
• selectively removing said first conductive film, said gate insulator film and a top portion of said semiconductor substrate to form a first groove;
• burying a first insulator film in said first groove to form an isolation region;
• forming a dummy film on said first conductive film and said isolation region;
• patterning said dummy film and said first conductive film to form an island-like layer;
• doping said semiconductor substrate with an impurity using said island-like layer as a mask;
• forming a second insulator film on said gate insulator film surrounded by said island-like layer and said first insulator film;
• removing said dummy film to form a second groove;
• and
• forming a second conductive film on said first conductive film in said second groove to form a gate electrode comprised of said first conductive film and said second conductive film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first groove in a semiconductor substrate;
• burying a first insulator film in said first groove to form an isolation region;
• forming a first film and a second film on a surface of said semiconductor substrate surrounded by said isolation region;
• patterning said second film to form a dummy gate layer;
• doping said semiconductor substrate with an impurity using said dummy gate layer as a mask;
• forming a second insulator film on said first film surrounded by said dummy gate layer and said first insulator film;
• removing said dummy gate layer and said first film to form a second groove;
• forming a gate insulator film on said semiconductor substrate in said second groove;
• and
• forming a gate electrode on said gate insulator film in said second groove.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a dummy gate layer on a semiconductor substrate;
• forming a dummy sidewall film on a side surface of said dummy gate layer;
• depositing an interlayer insulator film on an entire surface of the substrate having the dummy gate layer and the dummy sidewall;
• removing said interlayer insulator film until a top surface of said dummy gate layer is exposed;
• removing said dummy gate layer to form a groove;
• forming a gate electrode in said groove;
• removing said dummy sidewall film to form a cavity;
• and
• burying a sidewall material in said cavity to form a sidewall film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a gate insulator film on a semiconductor substrate;
• forming a gate electrode on said gate insulator film;
• forming a dummy sidewall film on a side surface of said gate electrode;
• depositing an interlayer insulator film on an entire surface of the substrate having the gate insulator, the gate electrode and the dummy side wall film;
• removing said interlayer insulator film until a top surface of said gate electrode is exposed;
• removing said dummy sidewall film to form a cavity;
• and
• burying a sidewall material in said cavity to form a sidewall film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a dummy gate layer on a semiconductor substrate;
• forming a sidewall insulator film on a side wall of said dummy gate layer, said sidewall insulator film having an etching selectivity with a material for forming said dummy gate layer;
• depositing an interlayer insulator film on an entire surface of the substrate having the dummy gate layer and the sidewall insulator film;
• removing said interlayer insulator film until a top surface of said dummy gate layer is exposed;
• removing said dummy gate layer to form a groove;
• forming a gate insulator film on a bottom surface of said groove;
• and
• forming a gate electrode in said groove on whose bottom surface said gate insulator film is formed.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a dummy gate comprised of a first silicon nitride film, on a semiconductor substrate;
• forming a first silicon oxide film on an entire surface of the semiconductor substrate having the first silicon nitride film formed thereon;
• forming a second silicon nitride film on an entire surface of the first silicon oxide film;
• forming an interlayer insulator film on an entire surface of the second silicon oxide film;
• polishing said interlayer insulator film until said dummy gate is exposed;
• removing upper portions of said first and second silicon nitride films to form a first groove;
• burying a second silicon oxide film in said first groove;
• performing anisotropic etching on said second silicon oxide film to expose said dummy gate while leaving said second silicon oxide film remaining on said second silicon nitride film;
• removing said dummy gate to form a second groove;
• forming a gate insulator film on a bottom surface and a side surface of said second groove;
• and
• forming a gate electrode in said second groove on whose bottom surface and side wall said gate insulator film is formed.